STUDIES ON CARRIER RECOMBINATION AT DISLOCATIONS IN COMPOUND SEMICONDUCTORS BY COMBINED SEM-CL EBIC MEASUREMENTS/

The high-resolution defect imaging by means of SEM- CL investigations is demonstrated on a GaP epilayer misfit dislocation network and GaAs glide dislocation half-loops. Starting from a qualitative discussion o f the defect configurations, a quantitative theoretical model for the contrast is developed. Especially, the influence of a high dislocation recombination activity on its contrast is dicussed. The theory is app lied to the analysis of the EBIC and CL contrast profiles of two surfa ce-parallel dislocations in GaP, where a defect strength of lambda = 2 .45 is determined.