Coulomb-coupling in vertically aligned self-assembled InAs quantum dots

Citation
Rj. Luyken et al., Coulomb-coupling in vertically aligned self-assembled InAs quantum dots, NANOTECHNOL, 10(1), 1999, pp. 14-18
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
10
Issue
1
Year of publication
1999
Pages
14 - 18
Database
ISI
SICI code
0957-4484(199903)10:1<14:CIVASI>2.0.ZU;2-L
Abstract
Electronic coupling effects in vertically aligned self-assembled InAs quant um dots are investigated using capacitance and far-infrared (FIR) spectrosc opy. Capacitance spectra show distinct shifts of the many-particle ground s tate energies, which is the result of a strong electrostatic dot-dot intera ction. FIR spectroscopy shows that the dynamics of the dot system is only s lightly affected by Coulomb interaction. The dots in the second layer are f ound to have a larger diameter than those in the first.