Intrinsic and carrier density effects on the pressure dependence of T-c ofhigh-temperature superconductors

Citation
Rj. Wijngaarden et al., Intrinsic and carrier density effects on the pressure dependence of T-c ofhigh-temperature superconductors, PHYSICA B, 265(1-4), 1999, pp. 128-135
Citations number
52
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
265
Issue
1-4
Year of publication
1999
Pages
128 - 135
Database
ISI
SICI code
0921-4526(199904)265:1-4<128:IACDEO>2.0.ZU;2-T
Abstract
The pressure dependence of T-c in high-temperature superconductors is exper imentally found to be influenced not only by a pressure-induced increase in charge carrier density but also by intrisic effects. The influence of both contributions was systematically investigated in Tl0.5Pb0.5Sr2Ca1-xYxCu2O7 . The behavior of superconductors with three or four CuO2-layers is further complicated by the inequivalence of the inner and outer CuO2-layers. High- pressure experiments up to 46 GPa are analyzed in view of the above, (C) 19 99 Elsevier Science B.V. All rights reserved.