Spectral hole-burning study of radiation-induced defects in diamond

Citation
I. Sildos et A. Osvet, Spectral hole-burning study of radiation-induced defects in diamond, PHYS ST S-A, 172(1), 1999, pp. 15-24
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
172
Issue
1
Year of publication
1999
Pages
15 - 24
Database
ISI
SICI code
0031-8965(19990316)172:1<15:SHSORD>2.0.ZU;2-5
Abstract
In this paper an overview on the spectroscopic and spectral hole-burning pr operties of radiation-induced spectral lines in nitrogen-containing diamond s is given. Special attention has been paid to the defects with the 774 and 813 nm zero-phonon lines that are suitable for room temperature spectral h ole burning. The temperature dependence of the widths of the homogeneous li nes is carefully examined. Persistent spectral hole burning in these lines is demonstrated at T = 100, 200 and 300 K. The creation of these colour cen tres dependent on irradiation and annealing parameters in different types o f diamonds is investigated. Assumptions about the nitrogen content of the c entres are made on the basis of these investigations. The possibility of pr oducing the 774 and 813 nm centres in synthetic diamonds is shown and the o ptimal parameters are given.