Photocurrent spectroscopy is used for studying electronic defect states in
the gap of optical-quality CVD diamond. The constant photocurrent method (C
PM), allowing to measure the optical (photoionization) cross-section of def
ects, is applied on samples with a different surface treatment. The measure
d photoionization cross-section spectra are discussed and attributed to mai
n defects in CVD diamond layers. A photoionization cross-section of a defec
t, with an onset at about 2.2 eV, is attributed to the single-substitutiona
l nitrogen defect (EPR P1 resonance at g = 2.0024). This defect is denoted
as D2. Additionally, a defect with an onset at about 1.2 eV is observed on
"as-grown" samples or after additional hydrogen plasma treatment. This defe
ct, denoted as D1, diminishes after oxidation of the diamond sample surface
. The EPR g = 2.0028 resonance, which was also suggested to be H-related, i
s studied as a function of hydrogenation and oxidation.