On photocurrent (and EPR) study of defect levels in CVD diamond

Citation
J. Rosa et al., On photocurrent (and EPR) study of defect levels in CVD diamond, PHYS ST S-A, 172(1), 1999, pp. 113-122
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
172
Issue
1
Year of publication
1999
Pages
113 - 122
Database
ISI
SICI code
0031-8965(19990316)172:1<113:OP(ESO>2.0.ZU;2-2
Abstract
Photocurrent spectroscopy is used for studying electronic defect states in the gap of optical-quality CVD diamond. The constant photocurrent method (C PM), allowing to measure the optical (photoionization) cross-section of def ects, is applied on samples with a different surface treatment. The measure d photoionization cross-section spectra are discussed and attributed to mai n defects in CVD diamond layers. A photoionization cross-section of a defec t, with an onset at about 2.2 eV, is attributed to the single-substitutiona l nitrogen defect (EPR P1 resonance at g = 2.0024). This defect is denoted as D2. Additionally, a defect with an onset at about 1.2 eV is observed on "as-grown" samples or after additional hydrogen plasma treatment. This defe ct, denoted as D1, diminishes after oxidation of the diamond sample surface . The EPR g = 2.0028 resonance, which was also suggested to be H-related, i s studied as a function of hydrogenation and oxidation.