Delay time measurements of NiS2-xSex-based switches

Delay time measurements in M\NiS2-xSex\ M structures (M is a metal), exhibi ting electrical switching with N-shaped V-I characteristics, are presented. The time was found to depend strongly on the applied voltage, tending to i nfinity at a voltage V near dc threshold voltage, and sharply decreasing as the pulse amplitude rises. For sufficiently high overvoltages the delay ti me falls in the range from about 10 mu s to 1 ms. The formation of high ele ctric field domains was observed. The possible influence of nonthermal, ele ctronic effects on switching and on the metal-insulator transition in NiS2- xSex is discussed.