Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties

Authors
Chen, HQ Johansson, LG Ivanov, ZG Erts, D
Citation
Hq. Chen et al., Epitaxial Tl-2201 thin films on single crystal LaAlO3: Preparation and properties, PHYS ST S-A, 172(1), 1999, pp. 165-175
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
172
Issue
1
Year of publication
1999
Pages
165 - 175
Database
ISI
SICI code
0031-8965(19990316)172:1<165:ETTFOS>2.0.ZU;2-G
Abstract
Epitaxial Tl-2201 films have been prepared on single crystal LaAlO3 substra tes. Precursor films made by laser ablation were treated with Tl2O(g) at hi gh temperature in near-equilibrium conditions. The effects of annealing tem perature, heating rate and stoichiometry of the Tl2O(g) source on the prope rties of the films were investigated. By optimizing the method of preparati on, highly smooth, c-axis oriented and epitaxial films were obtained. The r ocking curve of the (0, 0, 10) reflection had a FWHM of 0. 27 degrees. A ma ximum T-c of 92 K was achieved in as-annealed films.