Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

Citation
J. Eroms et al., Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices, PHYS REV B, 59(12), 1999, pp. R7829-R7832
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
12
Year of publication
1999
Pages
R7829 - R7832
Database
ISI
SICI code
0163-1829(19990315)59:12<R7829:SOAERI>2.0.ZU;2-X
Abstract
We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensu rability features at low magnetic fields. The broad maximum can be ascribed to a class of orbits involving multiple reflections on a single antidot. T his is shown by both a simple transport calculation based on a classical Ku bo formula and an analysis of the Poincare sections at different magnetic-f ield values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum. [S0163-1829(99)50512-2].