Structure of Se-adsorbed GaAs(111)A-(2 root 3x2 root 3)-R30 degrees surface

Authors
Ohtake, A Komura, T Hanada, T Miwa, S Yasuda, T Arai, K Yao, T
Citation
A. Ohtake et al., Structure of Se-adsorbed GaAs(111)A-(2 root 3x2 root 3)-R30 degrees surface, PHYS REV B, 59(12), 1999, pp. 8032-8036
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
12
Year of publication
1999
Pages
8032 - 8036
Database
ISI
SICI code
0163-1829(19990315)59:12<8032:SOSGR3>2.0.ZU;2-M
Abstract
The adsorption of Se on the GaAs(lll)A surface forms a well-ordered (2 root 3X2 root 3)-R30 degrees reconstruction. We have proposed a structure model for the GaAs(lll)A-(2 root 3X 2 root 3)-R30 degrees-Se surface, which cons ists of two Se trimers located at a hollow site of the GaAs(lll)A surface a nd three Ga vacancies per unit cell. The proposed structure model sufficien tly explains experimental data from reflection high-energy electron diffrac tion, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and satisfies electron counting requirements. [S0163-1829(99)09311-X].