Quantum Hall-insulator transitions in lattice models with strong disorder

Authors
Citation
K. Yang et Rn. Bhatt, Quantum Hall-insulator transitions in lattice models with strong disorder, PHYS REV B, 59(12), 1999, pp. 8144-8151
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
12
Year of publication
1999
Pages
8144 - 8151
Database
ISI
SICI code
0163-1829(19990315)59:12<8144:QHTILM>2.0.ZU;2-I
Abstract
We report results of numerical studies of the integer quantum Hall effect i n a tight-binding model on a two-dimensional square lattice with noninterac ting electrons, in the presence of a random potential as well as a uniform magnetic field applied perpendicular to the lattice. We consider field magn itudes such that:the area per flux quantum is commensurate with the lattice structure. Topological properties of the single electron wave functions ar e used to identify current carrying states that are responsible for the qua ntized Hall conductance. We study the interplay between the magnetic field and the disorder, and find a universal pattern with which the current carry ing states are destroyed by increasing disorder strength, and the system dr iven into an insulating state. We also discuss how to interpolate results o f lattice models to the continuum limit. The relationship to previous theor etical and experimental studies of quantum Hall insulator transitions in st rongly disordered systems at low-magnetic fields is discussed. [S0163-1829( 99)02911-2].