Surface migration during diamond growth studied by molecular orbital calculations

Citation
K. Larsson et Jo. Carlsson, Surface migration during diamond growth studied by molecular orbital calculations, PHYS REV B, 59(12), 1999, pp. 8315-8322
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
12
Year of publication
1999
Pages
8315 - 8322
Database
ISI
SICI code
0163-1829(19990315)59:12<8315:SMDDGS>2.0.ZU;2-P
Abstract
Migration of various important species (H, CH3, CH2, C2H, and C2H2 on a dia mond (111) surface has been investigated theoretically, using a cluster app roach and the second-order Moller-Plesset perturbation theory. The order of the energies (barriers) obtained for a single jump between two neighboring radical sites is CH2<H<C2H approximate to CH3 (52, 248, 350, and 353 kJ/mo l, respectively). The C2H2, species is assumed to migrate by an alternating onefold and difold site adsorption to the surface. The corresponding barri er obtained for C2H2 is 186 kJ/mol, which is somewhere in between that of C H2 and H. The present type of surface migration of chemisorbed species will , with one exception, be energetically favorable in comparison to any desor ption process. In the case of C2H2, a desorption process will be energetica lly favorable. [S0163-1829(99)00812-7].