Sb-precipitation-induced injection of Si self-interstitials in Si

Authors
Gaiduk, P Fage-Pedersen, J Hansen, JL Larsen, AN
Citation
P. Gaiduk et al., Sb-precipitation-induced injection of Si self-interstitials in Si, PHYS REV B, 59(11), 1999, pp. 7278-7281
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
11
Year of publication
1999
Pages
7278 - 7281
Database
ISI
SICI code
0163-1829(19990315)59:11<7278:SIOSSI>2.0.ZU;2-M
Abstract
The issue of point-defect injection during antimony precipitation in silico n is addressed in the present investigation. By studying the effect of Sb p recipitation in an Sb-box distribution on the diffusion of B or Sb in deepe r-lying spikes it is unambiguously concluded that Si self-interstitials are injected during the precipitation process. Possible causes of the self-int erstitial injection are discussed. [S0163-1829(99)09411-4].