View of the empty states of the Si(100)-(2x1) surface via scanning tunneling microscopy imaging at very low biases

Citation
Xr. Qin et Mg. Lagally, View of the empty states of the Si(100)-(2x1) surface via scanning tunneling microscopy imaging at very low biases, PHYS REV B, 59(11), 1999, pp. 7293-7296
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
11
Year of publication
1999
Pages
7293 - 7296
Database
ISI
SICI code
0163-1829(19990315)59:11<7293:VOTESO>2.0.ZU;2-J
Abstract
It is shown that the use of very-low-bias voltages in scanning tunneling mi croscopy of the Si(100)-2 x 1 surface achieves significantly greater sensit ivity to the electronic states of the top atomic layer than does the use of typical larger bias voltages. Measurements with the increased sensitivity demonstrate that the conventional interpretation of empty-state images of S i(100) is inadequate,New spectroscopic assignments for observed features ar e proposed. [S0163-1829(99)05708-2].