Ss. Murzin et al., Quantum Hall effect induced by electron-electron interaction in disorderedGaAs layers with a three-dimensional spectrum, PHYS REV B, 59(11), 1999, pp. 7330-7333
It is shown that the observed quantum Hall effect in epitaxial layers of he
avily doped ii-type GaAs with thickness (50-140 nm) larger the mean free pa
th of the conduction electrons (15-30 nm) and, therefore, with a three-dime
nsional single-particle spectrum is induced by the electron-electron intera
ction. The Hall resistance R-xy of the thinnest sample reveals a wide plate
au at small activation energy E-a = 0.4 K found in the temperature dependen
ce of the transverse resistance R-xx. The different minima in the transvers
e conductance G(xx) of the different samples show a universal temperature d
ependence (logarithmic in a large range of rescaled temperatures T/T-0)that
is reminiscent of electron-electron-interaction effects in coherent diffus
ive transport. [S0163-1829(99)09211-5].