Current injection from a metal to a disordered hopping system. II. Comparison between analytic theory and simulation

Monte Carlo simulations of hopping injection from a metal into a random-org anic dielectric, described in the previous paper (I), have been compared to results of analytic theory. Good agreement has been found for the field de pendence of the yield of charge carriers as a function of the energy barrie r at the interface. This is a crucial test for the validity of the assumpti ons required in order to render an analytical approach of hopping in a diso rdered system in the presence of a long-ranged Coulombic potential tractabl e. The most serious of these is the Onsager-like homogenous medium approach to treat the escape of a charge carrier from the Coulomb well once injecte d. The primary injection event into the dielectric has been treated in term s of hopping theory implying the concept of transport energy. [S0163-1829(9 9)08511-2].