Raman study of isotope effects and phonon eigenvectors in SiC

Citation
F. Widulle et al., Raman study of isotope effects and phonon eigenvectors in SiC, PHYS REV L, 82(15), 1999, pp. 3089-3092
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
15
Year of publication
1999
Pages
3089 - 3092
Database
ISI
SICI code
0031-9007(19990412)82:15<3089:RSOIEA>2.0.ZU;2-U
Abstract
We have measured Raman spectra of several SIC polytypes (3C, 6H, 15R) made from natural silicon (approximate to(28)Si) and Si-30. The isotope shifts o f the phonon frequencies show characteristic variations with their effectiv e wave vector in the zinc blende (3C) modification which arises from Brillo uin zone backfolding. This allows us to determine the phonon eigenvectors o f 3C SiC for the dispersion branches along the [111] direction. The observe d magnitudes of the Si and C ion displacements, as well as their relative p hase, confirm bond charge model and ab initio calculations. [S0031-9007(99) 08863-8].