Efficiency of and intensity distribution in a semiconductor laser operating in the 'leaky' regime

Citation
Ap. Bogatov et al., Efficiency of and intensity distribution in a semiconductor laser operating in the 'leaky' regime, QUANTUM EL, 29(1), 1999, pp. 28-32
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
QUANTUM ELECTRONICS
ISSN journal
10637818 → ACNP
Volume
29
Issue
1
Year of publication
1999
Pages
28 - 32
Database
ISI
SICI code
1063-7818(199901)29:1<28:EOAIDI>2.0.ZU;2-4
Abstract
The differential efficiency is calculated for a semiconductor laser having an optical waveguide with a wave leaking out into the substrate. The differ ential efficiency is shown to be close to the limit if the optical quality of the substrate (with losses similar to 1 cm(-1) or less) is sufficiently high and the remaining laser parameters have typical and attainable values. Optimisation of the parameters of such a laser makes it possible to increa se the output power severalfold compared with the power of a laser generati ng a conventional waveguide mode without radiation leakage.