The absorption cross section for bound-free transitions in semiconductor quantum dots

The absorption cross sections for intraband transitions in spherical semico nductor quantum dots are considered, with the self-consistent effects taken into account. Electronic states are described by the effective mass Schrod inger equation, and the influence of accumulated electronic charge on the e lectronic structure is accounted for by the conventional numerical self-con sistent procedure, i.e. by solving the Schrodinger and the Poisson equation s iteratively. The self-consistent Hartree potential is found to push the w ave function out of the dot "core" and thus may significantly influence the transition matrix elements, particularly in cases where the upper state is shallow or becomes a resonant state upon including the self-consistency. ( C) 1999 Elsevier Science Ltd. All rights reserved.