Core-level shifts at B- and Al-doped 6H-SiC studied by XPS

Silicon carbide (SiC) as an interesting material for new electronic applica tions was studied with respect to the binding states of doping elements (B, Al)Amorphization due to sputtering and the effect of surface states influe nce the core-level energies measured by SPS. For the comparison of a series of measurements after doping clement implantation and annealing, the use o f the SiC bulk-state energies determined at a fractured SiC sample as a bin ding energy reference is proposed. From the measured binding energy shifts and estimations with the simple model of electronegativity differences, it is found that B and Al after implantation already prefer bondings to carbon and not to Si. Copyright (C) 1999 John Wiley & Sons, Ltd.