Self-organization phenomena accompanying deformation thermal instability during anodic etching of silicon in a HF solution

Authors
Kuznetsov, VS Prokaznikov, AV
Citation
Vs. Kuznetsov et Av. Prokaznikov, Self-organization phenomena accompanying deformation thermal instability during anodic etching of silicon in a HF solution, TECH PHYS L, 25(3), 1999, pp. 242-244
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
3
Year of publication
1999
Pages
242 - 244
Database
ISI
SICI code
1063-7850(199903)25:3<242:SPADTI>2.0.ZU;2-0
Abstract
A model of self-organization during anodic etching in the preparation of po rous silicon is proposed. (C) 1999 American Institute of Physics. [S1063-78 50(99)03103-1].