BAND-OFFSET DETERMINATION AT STRAINED II-VI HETEROJUNCTIONS WITHIN A SELF-CONSISTENT TIGHT-BINDING MODEL

Authors
PRIESTER C BERTHO D JOUANIN C
Citation
C. Priester et al., BAND-OFFSET DETERMINATION AT STRAINED II-VI HETEROJUNCTIONS WITHIN A SELF-CONSISTENT TIGHT-BINDING MODEL, Physica. B, Condensed matter, 191(1-2), 1993, pp. 1-15
Citations number
96
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
191
Issue
1-2
Year of publication
1993
Pages
1 - 15
Database
ISI
SICI code
0921-4526(1993)191:1-2<1:BDASIH>2.0.ZU;2-N
Abstract
A semi-empirical tight-binding description is used to calculate band o ffsets at strained II-VI heterojunctions. Charge transfers across the interface are taken into account in a self-consistent way. Results are reported for both common anion (CdTe-HgTe, ZnTe-CdTe, ZnTe-HgTe) and common cation (ZnSe-ZnTe, ZnSxSe1-x-ZnSe) systems. The importance of t he strain effect is discussed. A good agreement with available experim ental data is obtained. Extensions of the method to other systems are briefly presented.