We report the properties of blue/green laser diodes and light emitting
diodes based on ZnSe-related II-VI semiconductor heterostructures. Fo
r blue/green laser diodes, threshold voltages for stimulated emission
as low as 12 V at 77 K have been achieved using HgSe ohmic contacts. D
ifferential quantum efficiencies as large as 36% per (uncoated) facet
has been obtained for some of the laser diodes. Stimulated emission at
wavelengths as short as 467.5 nm has been observed at 77 K. In additi
on, blue/green LED encapsulated lamps have been.fabricated and tested.
Power efficiencies as large as 7 x 10(-4) have been obtained at 300 K
for green LEDS which employ ZnSTeSe quantum wells. These devices exhi
bit power efficiencies greater than one percent (>10(-2)) in the tempe
rature range 120-200 K.