DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS

In this paper, we report the growth and characterization of Ii-VI devi ces grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epila yers were obtained using iodine from an electrochemical cell and nitro gen from a RF plasma source was used for p-type doping. Capacitance-vo ltage (C-V) electrochemical profiling of layers and devices has been u sed to ensure uniform n-type and p-type doping. The nitrogen doped epi layers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (V(Se)-Zn-N(Se)) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is repo rted. The pn junctions show blue laser emission between 448-473 nm und er pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation.