CHARACTERISTICS OF ZNCDSE SINGLE-QUANTUM-WELL LASER-DIODES

The Cd composition ratio x of the active layer dependence of the lasin g wavelength and the temperature dependence of the threshold current w ere investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x = 0. 15 to 520 nm ( green) for x = 0. 31 at 77 K. A clear reduction in the threshold curre nt was observed by applying high-reflectivity (HR) facet coating. 90%- 90% HR coated devices with x = 0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.