DIELECTRIC-PROPERTIES OF A-GAXSE100-X ALLOYS -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-10)

Citation
M. Ilyas et al., DIELECTRIC-PROPERTIES OF A-GAXSE100-X ALLOYS -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-10), Physica. B, Condensed matter, 254(1-2), 1998, pp. 57-69
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
254
Issue
1-2
Year of publication
1998
Pages
57 - 69
Database
ISI
SICI code
0921-4526(1998)254:1-2<57:DOAA->2.0.ZU;2-1
Abstract
The temperature and frequency dependence of dielectric constant (epsil on') and dielectric loss (epsilon '') are studied in the bulk glassy s amples of GaxSe100-x alloys (where x = 0, 2.5, 5.0, 7.5 and 10.0) in t he temperature (300-360 K) and frequency (0.12-100 KHz) range, respect ively. A strong dielectric dispersion has been observed when Ga is add ed to a-Se in the entire temperature range. The DC conductivity has al so been measured to see the effect of Ga on DC conduction loss which i s found to be prominent. The results are interpreted in terms of dipol ar theory for a-Se and a-Ga2.5Se97.5 samples while the remaining sampl es have been explained in terms of DC conduction loss. (C) 1998 Elsevi er Science B.V. All rights reserved.