DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS

Citation
T. Stapinski et al., DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS, Physica. B, Condensed matter, 254(1-2), 1998, pp. 99-106
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
254
Issue
1-2
Year of publication
1998
Pages
99 - 106
Database
ISI
SICI code
0921-4526(1998)254:1-2<99:DCOAAA>2.0.ZU;2-P
Abstract
High electronic quality a-SiC: H and a-SiN : H films with optical gap up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced c hemical vapour deposition in undiluted and hydrogen diluted reactive g as mixtures. Optical and photoelectrical characterizations have been p erformed. Successful progresses towards the deposition of a-SiC :H and a-SiN :H having high electronic properties and low defect densities h ave been obtained. Modulated photocurrent technique has been applied t o study gap state energetic profiles. (C) 1998 Elsevier Science B.V. A ll rights reserved.