DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS
T. Stapinski et al., DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS, Physica. B, Condensed matter, 254(1-2), 1998, pp. 99-106
High electronic quality a-SiC: H and a-SiN : H films with optical gap
up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced c
hemical vapour deposition in undiluted and hydrogen diluted reactive g
as mixtures. Optical and photoelectrical characterizations have been p
erformed. Successful progresses towards the deposition of a-SiC :H and
a-SiN :H having high electronic properties and low defect densities h
ave been obtained. Modulated photocurrent technique has been applied t
o study gap state energetic profiles. (C) 1998 Elsevier Science B.V. A
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