DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS

High electronic quality a-SiC: H and a-SiN : H films with optical gap up to 2.3 eV have been deposited by ultrahigh vacuum plasma enhanced c hemical vapour deposition in undiluted and hydrogen diluted reactive g as mixtures. Optical and photoelectrical characterizations have been p erformed. Successful progresses towards the deposition of a-SiC :H and a-SiN :H having high electronic properties and low defect densities h ave been obtained. Modulated photocurrent technique has been applied t o study gap state energetic profiles. (C) 1998 Elsevier Science B.V. A ll rights reserved.