STUDY OF AMORPHOUS MOS2 FILMS GROWN BY PULSED-LASER DEPOSITION

The amorphous structure of MoS2 films prepared by pulsed laser deposit ion (PLD) has been evaluated with the use of Raman and X-ray photoelec tron spectroscopy (XPS). The initial study of the room-temperature dep osited films indicated a featureless Raman spectrum. On closer examina tion, however, four weak reproducible bands were observed. There has b een some confusion in the literature as to the nature of this spectrum -whether it represents an amorphous MoS3 structure or a mixture of MoS 2 and sulfur. Our interpretation of the Raman and XPS data indicates t hat the laser-deposited films represent a mixture of small domains of MoS2 and amorphous sulfur.