COMPOSITION TUNABLE MEMORY AND THRESHOLD SWITCHING IN AL20ASXTE80-X SEMICONDUCTING GLASSES

I-V studies indicate a composition dependent switching behavior (Memor y or Threshold) in bulk Al20AsxTe80-x glasses, which is determined by the coordination and composition of aluminum. Investigations on temper ature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switchin g for the memory and threshold samples, respectively. The present resu lts also show that these samples have a wider composition range of thr eshold behavior with lower threshold voltages compared to other thresh old samples.