STRUCTURAL AND OPTICAL-PROPERTIES OF CD1-XZNXTE EPILAYERS GROWN ON GAAS (001) BY PULSED-LASER DEPOSITION

Authors
DEISS JL LOISON JL OHLMANN D ROBINO M VERSINI G
Citation
Jl. Deiss et al., STRUCTURAL AND OPTICAL-PROPERTIES OF CD1-XZNXTE EPILAYERS GROWN ON GAAS (001) BY PULSED-LASER DEPOSITION, Physica status solidi. a, Applied research, 169(1), 1998, pp. 77-84
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
169
Issue
1
Year of publication
1998
Pages
77 - 84
Database
ISI
SICI code
0031-8965(1998)169:1<77:SAOOCE>2.0.ZU;2-X
Abstract
Epilayers of Cd1-xZnxTe on GaAs (001) substrates were grown by a pulse d laser deposition technique, using either polycrystalline or cold-pre ssed targets. The composition and structural quality of these epilayer s were investigated by energy dispersive X-ray analysis, and X-ray dif fraction. A large and widely tunable induced optical absorption has be en observed in these CZT epilayers.