Jc. Seo et Dh. Kim, ULTRAFAST PHOTOINDUCED ABSORPTION DYNAMICS OF CDS0.4SE0.6 NANOSTRUCTURE SEMICONDUCTORS DOPED IN GLASS, Optics communications, 155(1-3), 1998, pp. 43-46
Ultrafast phenomena of photoinduced absorption far below the band gap
of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were inve
stigated by using time-resolved differential transmittance spectroscop
y. The carriers populating the semiconductor-glass interfaces within l
ess than 1 ps after photoexcitation give rise to ultrafast photoinduce
d absorption. This transient photoinduced absorption decays with a lif
etime shorter than 10 ps, which strongly depends on the excitation int
ensity. We assign this behavior to nongeminate electron-hole recombina
tion at the semiconductor-glass interfaces. (C) 1998 Elsevier Science
B.V. All rights reserved.