MECHANISM OF THE RF-SPUTTERING OF MIXED OXIDES

Citation
Vm. Mukhortov et al., MECHANISM OF THE RF-SPUTTERING OF MIXED OXIDES, Technical physics, 43(9), 1998, pp. 1097-1101
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
10637842
Volume
43
Issue
9
Year of publication
1998
Pages
1097 - 1101
Database
ISI
SICI code
1063-7842(1998)43:9<1097:MOTROM>2.0.ZU;2-O
Abstract
New experimental data on the growth mechanisms of multicomponent Fb(Zr ,Ti)O-3, (Ba,Sr)TiO3, and Y-Ba-Cu-O films in an rf discharge plasma ar e presented. An investigation of the spatial distribution of the radia ted intensity of the sputtered particles in the rf plasma during the d eposition of films of these mixed oxides in the epitaxial state reveal s general laws governing their transport from the target to the substr ate, which are stipulated by features of the negative glow of the rf d ischarge. The roles of external and internal parameters are examined f rom the standpoint of describing the mechanisms of the heteroepitaxial growth of mixed oxides. (C) 1998 American Institute of Physics. [S106 3-7842(98)02009-1].