Reliability & quality assurance are a major concern in the semiconduct
or industry. However, when developing a new mass-production technology
, like micro-machined silicon-based devices, these aspects became part
icularly critical. Indeed, silicon-based thin-film tin-dioxide gas-sen
sor reliability has not been deeply studied; most of the completed stu
dies address thick-film devices made on alumina substrates [1 - 3]. Ne
w test- methods & equipment must be engineered to meet the ever-increa
sing expectations of the marketplace. This paper justifies the need fo
r new accelerated tests for chemical sensors. A new method which allow
s 'stressing the entire device structure' has been implemented. Test r
esults obtained using this new approach allow us to evaluate the senso
r reliability in the range of the requirements of applications using g
as sensors.