PRELIMINARY INVESTIGATION OF THE KINETICS OF POSTOXIDATION RAPID THERMAL ANNEAL INDUCED HOLE-TRAP-PRECURSOR FORMATION IN MICROELECTRONIC SIO2-FILMS

Measurements of the growth of E' center precursor and hole trap precur sor densities versus postoxidation anneal time show that both approach saturation values and that the approach to these values is more rapid at higher temperatures. Our results, at least qualitatively, show tha t a kinetic component can be added to a predictive thermodynamics-base d model of oxide hole trapping. The results also indicate quite strong ly that a thermodynamics approach to oxide hole trap precursor modelin g is appropriate, i.e., the relevant defect densities approach thermod ynamic equilibrium or quasiequilibrium in reasonable times. (C) 1998 A merican Institute of Physics. [S0003-6951(98)04141-2].