High resolution synchrotron radiation has been used to investigate the
occurrence of coherent hybrid reflections (CHR) in the In0.49Ga0.51P/
GaAs(001) structure. Several phi scans at the 002 layer reflection wer
e carried out. The scanned phi intervals are correlated by the axis sy
mmetry and [001] should present the same pattern. A break in the symme
try is observed due to constructive/destructive interference of the hy
brid amplitudes with the amplitude from the 002 layer reflection. The
effects of substrate miscut and interface distance are taken into acco
unt to explain the observed patterns. The application of CHR as a high
sensitive tool to analyze epitaxial growth is discussed. (C) 1998 Ame
rican Institute of Physics. [S0003-6951(98)03841-8].