RELAXOR BEHAVIOR AND ELECTROMECHANICAL PROPERTIES OF PB(MG1 3NB2/3)O-3 THIN-FILMS/

Authors
KIGHELMAN Z DAMJANOVIC D SEIFERT A SAGALOWICZ L SETTER N
Citation
Z. Kighelman et al., RELAXOR BEHAVIOR AND ELECTROMECHANICAL PROPERTIES OF PB(MG1 3NB2/3)O-3 THIN-FILMS/, Applied physics letters, 73(16), 1998, pp. 2281-2283
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
16
Year of publication
1998
Pages
2281 - 2283
Database
ISI
SICI code
0003-6951(1998)73:16<2281:RBAEPO>2.0.ZU;2-Z
Abstract
Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable pr ecursor solutions and appropriate processing were used to greatly redu ce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior . (C) 1998 American Institute of Physics. [S0003-6951(98)03142-8].