FORMATION OF EPITAXIAL COSI2 SPIKE IN CO SI3N4/SI(100) SYSTEM AND ITSCRYSTALLOGRAPHIC STRUCTURE/

The formation of CoSi2 spike in the Co/Si3N4/Si(100) system and its cr ystallographic structure have been investigated. An annealing at 1050 degrees C caused not only agglomeration of Co film but penetration of Co agglomerates through the Si3N4 layer. The CoSi2 spike of B type epi taxial and twinned orientation of CoSi2[110]parallel to Si[110], Si(11 (1) over bar)parallel to CoSi2((1) over bar 1 (1) over bar) and Si(<( 11)over bar>1)parallel to CoSi2(1 (1) over bar 1) was formed in the Si substrate by the penetrated Co source. The formation of the epitaxial CoSi2 spike can be explained by the fast diffusion of Co atoms along defects in Si such as dislocations resulting from stress between the S i3N4 layer and the Si substrate. (C) 1998 American Institute of Physic s. [S0003-6951(98)00742-6].