FABRICATION OF SINGLE-CRYSTAL LITHIUM-NIOBATE FILMS BY CRYSTAL ION SLICING

We report on the implementation of crystal ion slicing in lithium niob ate (LiNbO3). Deep-ion implantation is used to create a buried sacrifi cial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of t he sample. 9-mu m-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyr oelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric respons e is found in the films. (C) 1998 American Institute of Physics. [S000 3-6951(98)04142-4].