ELECTRICAL-PROPERTIES OF WAFER-BONDED GAAS SI HETEROJUNCTIONS/

This letter reports on the fabrication and electrical characterization of wafer-fused GaAs/Si heterojunctions. A detailed study of the effec t of surface preparation on bonding GaAs to Si was performed. The curr ent-voltage (I-V) characteristics of both n-GaAs/n-Si and p-GaAs/p-Si were measured from 77 K to room temperature. The forward I-V character istics were analyzed using a numerical model that includes thermionic emission across the heterojunction. Specifically, a p-GaAs/p-Si hetero interface of high electrical quality was obtained by direct hydrophobi c bonding. (C) 1998 American Institute of Physics. [S0003-6951(98)0034 2-8].