ORIGIN OF THE CHARGE TO BREAKDOWN DISTRIBUTIONS IN THIN SILICON DIOXIDE FILMS

Authors
OKHONIN S FAZAN P
Citation
S. Okhonin et P. Fazan, ORIGIN OF THE CHARGE TO BREAKDOWN DISTRIBUTIONS IN THIN SILICON DIOXIDE FILMS, Applied physics letters, 73(16), 1998, pp. 2343-2344
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
16
Year of publication
1998
Pages
2343 - 2344
Database
ISI
SICI code
0003-6951(1998)73:16<2343:OOTCTB>2.0.ZU;2-U
Abstract
This letter shows that in thin silicon dioxide films the charge to bre akdown distribution can have two origins. It can be related to the oxi de thickness variation across the wafer or to the statistical nature o f the breakdown event. The oxide nonuniformity is a major factor in th e case of stress-induced-bulk-charge enhanced breakdown. (C) 1998 Amer ican Institute of Physics. [S0003-6951(98)01642-8].