A NOVEL-APPROACH FOR DOPING IMPURITY IN THIN-FILM IN-SITU BY DUAL-BEAM PULSED-LASER DEPOSITION

Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in t hin film by using dual-beam pulsed-laser deposition technique that all ows in situ controlling doping under a wide range of conditions. We de monstrated doping Ag in situ in YBa2Cu3O7-delta thin films and for the first time observed long bar-like Ag structures with a length up to 1 50 mu m in the as-deposited films, which may have important applicatio n in the fabrication of superconductor-normal metal-superconductor Jos ephson junctions. (C) 1998 American Institute of Physics. [S0034-6748( 98)00610-8].