HOLE TRANSPORTING MATERIALS WITH HIGH GLASS-TRANSITION TEMPERATURES FOR USE IN ORGANIC LIGHT-EMITTING DEVICES

Citation
Df. Obrien et al., HOLE TRANSPORTING MATERIALS WITH HIGH GLASS-TRANSITION TEMPERATURES FOR USE IN ORGANIC LIGHT-EMITTING DEVICES, Advanced materials, 10(14), 1998, pp. 1108
Citations number
18
Categorie Soggetti
Material Science
Journal title
ISSN journal
09359648
Volume
10
Issue
14
Year of publication
1998
Database
ISI
SICI code
0935-9648(1998)10:14<1108:HTMWHG>2.0.ZU;2-X
Abstract
Communication: Efficient and stable organic light-emitting devices (OL EDs) can be fabricated using hole transporting materials with a high g lass transition temperature (T-g), as reported here. A series of devic es utilizing high T-g hole transporting layers, consisting of compound s with a biphenyl backbone such as the one shown in the Figure, are in vestigated with respect to their I-V characteristics, external quantum efficiencies, ionization potentials, and electron affinities.