DRY-ETCHING OF ZNO FILMS WITH HEXAFLUOROACETYLACETONE

Authors
DROES SR KODAS TT HAMPDENSMITH MJ
Citation
Sr. Droes et al., DRY-ETCHING OF ZNO FILMS WITH HEXAFLUOROACETYLACETONE, Advanced materials, 10(14), 1998, pp. 1129
Citations number
25
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
10
Issue
14
Year of publication
1998
Database
ISI
SICI code
0935-9648(1998)10:14<1129:DOZFWH>2.0.ZU;2-S
Abstract
Communication: A dry route to etching metal oxides at low temperatures (<200 degrees C) using gaseous beta-diketones is described. The Figur e is an SEM micrograph of a ZnO film after etching. This method is a p romising alternative to current wet-etching and cleaning methods as ea sily desorbed, volatile, low-molecular-weight metal-organic products a re produced.