DRY-ETCHING OF ZNO FILMS WITH HEXAFLUOROACETYLACETONE

Citation
Sr. Droes et al., DRY-ETCHING OF ZNO FILMS WITH HEXAFLUOROACETYLACETONE, Advanced materials, 10(14), 1998, pp. 1129
Citations number
25
Categorie Soggetti
Material Science
Journal title
ISSN journal
09359648
Volume
10
Issue
14
Year of publication
1998
Database
ISI
SICI code
0935-9648(1998)10:14<1129:DOZFWH>2.0.ZU;2-S
Abstract
Communication: A dry route to etching metal oxides at low temperatures (<200 degrees C) using gaseous beta-diketones is described. The Figur e is an SEM micrograph of a ZnO film after etching. This method is a p romising alternative to current wet-etching and cleaning methods as ea sily desorbed, volatile, low-molecular-weight metal-organic products a re produced.