Me. Pemble et al., INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH, CHEMICAL VAPOR DEPOSITION, 4(5), 1998, pp. 190
A novel surface modification technique that is designed to protect, pa
ssivate, and functionalize InP surfaces by means of chemical binding o
f specific molecular species is described. The new technique-in situ s
urface adduct passivation (INSAP)-follows conventional MOCVD by an ato
mic layer expitaxy (ALE) type process in which first the group V precu
rsor and then an amine are allowed to interact with the freshly grown
surface to form an adduct layer, which is resistant to oxidation but r
emovable by gentle heating.