INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH

Citation
Me. Pemble et al., INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH, CHEMICAL VAPOR DEPOSITION, 4(5), 1998, pp. 190
Citations number
20
Categorie Soggetti
Materials Science, Coatings & Films",Electrochemistry,"Physics, Condensed Matter
Journal title
ISSN journal
09481907
Volume
4
Issue
5
Year of publication
1998
Database
ISI
SICI code
0948-1907(1998)4:5<190:I-ISAP>2.0.ZU;2-#
Abstract
A novel surface modification technique that is designed to protect, pa ssivate, and functionalize InP surfaces by means of chemical binding o f specific molecular species is described. The new technique-in situ s urface adduct passivation (INSAP)-follows conventional MOCVD by an ato mic layer expitaxy (ALE) type process in which first the group V precu rsor and then an amine are allowed to interact with the freshly grown surface to form an adduct layer, which is resistant to oxidation but r emovable by gentle heating.