INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH

A novel surface modification technique that is designed to protect, pa ssivate, and functionalize InP surfaces by means of chemical binding o f specific molecular species is described. The new technique-in situ s urface adduct passivation (INSAP)-follows conventional MOCVD by an ato mic layer expitaxy (ALE) type process in which first the group V precu rsor and then an amine are allowed to interact with the freshly grown surface to form an adduct layer, which is resistant to oxidation but r emovable by gentle heating.