LIQUID INJECTION MOCVD OF ZIRCONIUM DIOXIDE USING A NOVEL MIXED-LIGAND ZIRCONIUM PRECURSOR

Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr-2((O Pr)-Pr-i)(6)(thd)(2) (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate) O xide growth was observed over an unusually wide range of temperatures from 250 degrees C to at least 600 degrees C. Optimized growth of ZrO2 occurred between 350 degrees C and 550 degrees C, which is considerab ly lower than the optimum temperature for deposition from the conventi onal Zr(thd)(4) precursor. Analysis of the films by Auger electron spe ctroscopy showed that carbon was present at levels of between similar to 2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.