A. Greiner et al., MODELING SURFACE-SCATTERING EFFECTS IN THE SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION BASED ON THE SPHERICAL-HARMONICS EXPANSION, Semiconductor science and technology (Print), 13(10), 1998, pp. 1080-1089
In a spherical-harmonics expansion formulation of the semi-classical B
oltzmann transport equation the influence of surface scattering mechan
isms on device characteristics has been investigated. The main feature
of this work is to account for global as well as for local scattering
mechanisms. The models associated with the surface scattering mechani
sms have been applied to the simulation of MOS devices and they proved
able to reproduce the mobility degradation of semi-empirical mobility
models and experimental data. Moreover, the experimentally detected u
niversal mobility behaviour of inversion layers is quantitatively repr
oduced by our model.