MODELING SURFACE-SCATTERING EFFECTS IN THE SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION BASED ON THE SPHERICAL-HARMONICS EXPANSION

Citation
A. Greiner et al., MODELING SURFACE-SCATTERING EFFECTS IN THE SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION BASED ON THE SPHERICAL-HARMONICS EXPANSION, Semiconductor science and technology (Print), 13(10), 1998, pp. 1080-1089
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
10
Year of publication
1998
Pages
1080 - 1089
Database
ISI
SICI code
0268-1242(1998)13:10<1080:MSEITS>2.0.ZU;2-X
Abstract
In a spherical-harmonics expansion formulation of the semi-classical B oltzmann transport equation the influence of surface scattering mechan isms on device characteristics has been investigated. The main feature of this work is to account for global as well as for local scattering mechanisms. The models associated with the surface scattering mechani sms have been applied to the simulation of MOS devices and they proved able to reproduce the mobility degradation of semi-empirical mobility models and experimental data. Moreover, the experimentally detected u niversal mobility behaviour of inversion layers is quantitatively repr oduced by our model.