Ts. Shamirzaev et al., NEW IMPURITY-INDUCED DEFECT IN HEAVILY ZINC-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY, Semiconductor science and technology (Print), 13(10), 1998, pp. 1123-1129
The electrical and photoluminescence properties of heavily doped GaAs:
Zn(100) layers grown by liquid phase epitaxy from gallium and bismuth
solutions at various temperatures have been studied. It is shown that
a new line at 1.35 eV appears in low-temperature photoluminescence spe
ctra of the layers doped at a level over 10(19) cm(-3). It is found th
at this line is associated with a novel defect. The concentration of d
efects increases with the doping level proportionally to the concentra
tion of free holes to the power 5.35 +/- 0.1. The exponent is independ
ent of the growth solution used (gallium or bismuth) and growth temper
ature. It has been found that the defect is a neutral complex consisti
ng of native point defects of GaAs-an antisite defect of gallium in an
arsenic site and two arsenic vacancies.