CURRENT TRANSPORT MECHANISMS IN N-TYPE AMORPHOUS SILICON-CARBON ON P-TYPE CRYSTALLINE SILICON (A-SI0.8C0.2-H C-SI) HETEROJUNCTION DIODES/

N-type amorphous silicon-carbon on p-type crystalline silicon heteroju nction diodes have been fabricated and electrically characterized. The a-Si0.8C0.2:H film was deposited by plasma-enhanced chemical vapour d eposition. The electrical properties were investigated by capacitance- voltage and current-voltage measurements at different temperatures. Cu rrent-voltage characteristics present good rectifying properties, 60 0 00:1 at +/-0.5 V at room temperature. The analysis of current-voltage characteristics at different temperatures indicates that the current i s dominated by recombination at the A-Si0.8Co0.2:H side of the space c harge region in forward bias. The reverse characteristics show a leaka ge current which increases exponentially with the applied voltage. Fin ally, numerical simulations are presented which explain the experiment al results throughout the temperature range.