LUMINESCENCE BEHAVIOR OF CHEMICALLY GROWN ZNO QUANTUM DOTS

Citation
K. Borgohain et S. Mahamuni, LUMINESCENCE BEHAVIOR OF CHEMICALLY GROWN ZNO QUANTUM DOTS, Semiconductor science and technology (Print), 13(10), 1998, pp. 1154-1157
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
10
Year of publication
1998
Pages
1154 - 1157
Database
ISI
SICI code
0268-1242(1998)13:10<1154:LBOCGZ>2.0.ZU;2-F
Abstract
The luminescent properties of undoped ZnO quantum dots encapsulated in various stabilizing agents have been investigated at room temperature . Stoichiometric as well as non-stochiometric ZnO quantum dots have be en prepared by different routes. These studies indicate the importance of OH radical on the surface of ZnO quantum dots. In general, it has been observed that surface defects play an active role in the luminesc ence behaviour of quantum dots. ZnO quantum dots, doped with copper, h ave also been studied. Doping Cu in ZnO quantum dots, which have OH ra dical on its surface, is responsible for quenching green luminescence at 530 nm.