POWER INTEGRATION - THE ORIGIN OF THE PARASITIC EFFECTS INDUCED BY ANINSULATED GATE BIPOLAR-TRANSISTOR ON ITS CONTROL AND PROTECTION LOGIC

The insulated gate bipolar transistor (IGBT) is a widely used power de vice, because it combines a small on-state voltage drop and the high s peed of the MOSFET at high current and high voltage levels, in order t o extend the applications of IGBTs, manufacturers are trying to design a device with a monolithic integration of circuits for detecting, pro tecting against and controlling the over-current, over-voltage and ove r-temperature. Parasitic effects have been observed with these test ci rcuits, under the circumstances, the perturbation of the power device on the control logic. Bidimensional electrical simulations are used in order to identify the failure mechanisms; then, we propose some remed ies.