HYDROGENATION STUDIES IN P-GAAS

Hydrogenation studies in p-GaAs have been performed by fabricating Pd/ p-GaAs devices. The devices have been studied by I-V and C-V measureme nts. Hydrogenation has been found to improve the ideality factor of th e diode. The forward C-V characteristics have shown the presence of in terfacial deep donors at E-c- 1.05 eV and E-c- 0.88 eV, the density of which decreased on hydrogenation. The content of hydrogen in Pd/p-GaA s has been measured both in the semiconducting substrates and the pall adium thin film by ERDA using 55 MeV Si ions.